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| SI SEMICONDUCTORS CO.,LTD. Product specification NPN SILICON POWER TRANSISTOR BUL1688L FEATURES: HIGH SWITCHING SPEED WIDE SOA COMPACT FLUORESCENT LAMP APPLICATIONS: SUITABLE FOR 110V CIRCUIT MODE: ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES MAXIMUM RATINGSTc=25C SOT-82 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VALUE UNIT VCBO VCEO VEBO IC PC Tj Tstg 400 250 9 8.0 60 150 V V V A W ELECTRICAL CHARACTERISTICSTc=25C CHARACTERISTIC Collector Cutoff Current Collector Cutoff Current Collector-Emitter Sustaining Voltage Base-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain SYMBOL TEST CONDITION MIN MAX UNIT w w w t a .D ICBO ICEO VCEO VEBO Vces Vbes hFE S a -65-150 e h C C U t4 e .c m o SOT-82 1- E2-C3- B VCB=400V VCE=250V,IB=0 IC=10mA,IB=0 IE=1mA,IC=0 IC=1.0A,IB=0.2A IC=2.0A,IB=0.4A IC=5.0A,IB=1.0A IC=2.0A,IB=0.4A VCE=5V,IC=10mA VCE=5V,IC=1.0A VCE=5V,IC=5A 8 10 5 250 9 100 250 A A V V 0.5 0.7 1.5 1.5 40 V Si semiconductors 1 2002.08 www..com V BUL1688L SOA(DC) 100 10 1 60 0.1 0.01 0.001 1 10 100 1 40 20 Vce(v) 0 1000 0 50 100 Tj() PcTj % 120 100 80 Is/s Ic(A) Ptot 150 hFE-Ic 100 Tj=125 Vce=1.5V 100 hFE-Ic hFE Vce=5V Tj=125 10 Tj=25 10 Tj=25 1 0.001 0.01 0.1 1 10 1 0.001 0.01 0.1 1 Ic(A) 10 Vcesat-Ic Vcesat(v) 10 1.6 1.4 1 Tj=125 0.1 hFE=5 0.01 0.1 Si semiconductors 1 Ic(A) 10 Vbesat-Ic Vbesat(v) 1.2 1 Tj=25 Tj=25 0.8 Tj=125 0.6 hFE=5 0.4 0.1 1 Ic(A) 10 2002.08 SI SEMICONDUCTORS CO.,LTD. Product specification SOT-82 MECHANICAL DATA SYMBOL A B b b1 C c1 D e e3 F H H2 min 7.4 10.5 0.7 0.49 2.4 1.0 15.4 2.2 4.15 3.8 2.54 2.15 4.65 nom UNITmm max 7.8 10.8 0.9 0.75 2.7 1.3 16 Si semiconductors 2 2002.08 |
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